FDPF3860T datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

* RDS(on) = 29.1 mΩ (Typ.) @ VGS = 10 V, ID = 5.9 A
* Fast Switching Speed
* Low Gate Charge
* High Performance Trench Technology for Extremely Low RDS(on.

Application

* Consumer Appliances
* LCD/LED/PDP TV
* Synchronous Rectification
* Uninterruptible Power Supply
* .

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications
* Consumer Appliances
* .

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